PART |
Description |
Maker |
MMBD7000LT1 |
Dual Switching Diode 200mA Surface Mount Switching Diode-100V
|
WILLAS ELECTRONIC CORP
|
BAR81W |
PIN Diodes - RF switching diode for use in shunt configuration Silicon RF Switching Diode
|
INFINEON[Infineon Technologies AG]
|
MMBD7000LT1 ON2085 |
Dual Switching Diode DUAI SWITCHING DIODE From old datasheet system
|
MOTOROLA INC ON Semi MOTOROLA[Motorola, Inc]
|
CPD74 |
Switching Diode Monolithic Isolated Quad Switching Diode Chip
|
Central Semiconductor Corp
|
SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
CPD80V10 |
Switching Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
BAY8012 BAY80-TAP |
Small Signal Switching Diode, High Voltage DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
|
Vishay Siliconix Vishay Semiconductors
|
IKA10N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
CMKD2836 CMKD2838 |
SMD Switching Diode Dual Pair: Common Cathode SMD Switching Diode Dual Pair: Common Anode SURFACE MOUNT ULTRAmini DUAL PAIR HIGH SPEED SWITCHING SILICON DIODES
|
Central Semiconductor Corp
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|